2002-01-31 page 1 preliminary data spi35n10 spp35n10,spb35n10 sipmos ? ? ? ? power-transistor product summary v ds 100 v r ds(on) 44 m i d 35 a feature n-channel enhancement mode 175c operating temperature avalanche rated d v /d t rated p-to263-3-2 p-to220-3-1 p-to262-3-1 marking 35n10 35n10 35n10 type package ordering code spp35n10 p-to220-3-1 q67042-s4123 spb35n10 p-to263-3-2 q67042-s4103 spi35n10 p-to262-3-1 q67042-s4124 maximum ratings ,at t j = 25 c, unless otherwise specified parameter symbol value unit continuous drain current t c =25c t c =100c i d 35 26.4 a pulsed drain current t c =25c i d puls 140 avalanche energy, single pulse i d =35 a , v dd =25v, r gs =25 e as 245 mj reverse diode d v /d t i s =35a, v ds =80v, d i /d t =200a/s, t jmax =175c d v /d t 6 kv/s gate source voltage v gs 20 v power dissipation t c =25c p tot 150 w operating and storage temperature t j , t stg -55... +175 c iec climatic category; din iec 68-1 55/175/56
2002-01-31 page 2 preliminary data spi35n10 spp35n10,spb35n10 thermal characteristics parameter symbol values unit min. typ. max. characteristics thermal resistance, junction - case r thjc - - 1 k/w thermal resistance, junction - ambient, leaded r thja - - 62 smd version, device on pcb: @ min. footprint @ 6 cm 2 cooling area f) r thja - - - - 62 40 electrical characteristics , at t j = 25 c, unless otherwise specified parameter symbol values unit min. typ. max. static characteristics drain-source breakdown voltage v gs =0v, i d =1ma v (br)dss 100 - - v gate threshold voltage, v gs = v ds i d =83a v gs(th) 2.1 3 4 zero gate voltage drain current v ds =100v, v gs =0v, t j =25c v ds =100v, v gs =0v, t j =125c i dss - - 0.01 1 1 100 a gate-source leakage current v gs =20v, v ds =0v i gss - 1 100 na drain-source on-state resistance v gs =10v, i d =26.4a r ds(on) - 36 44 m 1 device on 40mm*40mm*1.5mm epoxy pcb fr4 with 6cm2 (one layer, 70 m thick) copper area for drain connection. pcb is vertical without blown air.
2002-01-31 page 3 preliminary data spi35n10 spp35n10,spb35n10 electrical characteristics , at t j = 25 c, unless otherwise specified parameter symbol conditions values unit min. typ. max. dynamic characteristics transconductance g fs v ds 2* i d * r ds(on)max , i d =26.4a 12 23 - s input capacitance c iss v gs =0v, v ds =25v, f =1mhz - 1180 1570 pf output capacitance c oss - 245 326 reverse transfer capacitance c rss - 137 206 turn-on delay time t d(on) v dd =50v, v gs =10v, i d =35a, r g =7 - 12.2 18.3 ns rise time t r - 63 95 turn-off delay time t d(off) - 39 59 fall time t f - 23 34 gate charge characteristics gate to source charge q gs v dd =80v, i d =35a - 6.5 8.6 nc gate to drain charge q gd - 27 41 gate charge total q g v dd =80v, i d =35a, v gs =0 to 10v - 49 65 gate plateau voltage v (plateau) v dd =80v, i d =35a - 6.1 - v reverse diode inverse diode continuous forward current i s t c =25c - - 35 a inverse diode direct current, pulsed i sm - - 140 inverse diode forward voltage v sd v gs =0v, i f =35a - 0.95 1.25 v reverse recovery time t rr v r =50v, i f = l s , d i f /d t =100a/s - 80 100 ns reverse recovery charge q rr - 230 290 nc
2002-01-31 page 4 preliminary data spi35n10 spp35n10,spb35n10 1 power dissipation p tot = f ( t c ) 0 20 40 60 80 100 120 140 160 c 190 t c 0 20 40 60 80 100 120 w 160 spp35n10 p tot 2 drain current i d = f ( t c ) parameter: v gs 10 v 0 20 40 60 80 100 120 140 160 c 190 t c 0 4 8 12 16 20 24 28 32 a 38 spp35n10 i d 3 safe operating area i d = f ( v ds ) parameter : d = 0 , t c = 25 c 10 -1 10 0 10 1 10 2 10 3 v v ds 0 10 1 10 2 10 3 10 a spp35n10 i d r d s ( o n ) = v d s / i d dc 10 ms 1 ms 100 s 10 s t p = 2.5 s 4 transient thermal impedance z thjc = f ( t p ) parameter : d = t p / t 10 -7 10 -6 10 -5 10 -4 10 -3 10 -2 10 0 s t p -4 10 -3 10 -2 10 -1 10 0 10 1 10 k/w spp35n10 z thjc single pulse 0.01 0.02 0.05 0.10 0.20 d = 0.50
2002-01-31 page 5 preliminary data spi35n10 spp35n10,spb35n10 5 typ. output characteristic i d = f ( v ds ); t j =25c parameter: t p = 80 s 0 1 2 3 4 5 6 v 8 v ds 0 10 20 30 40 50 60 70 a 90 i d a b c d e v gs [v]= a= 5 b= 6 c= 8 d= 10 e= 12 6 typ. drain-source on resistance r ds(on) = f ( i d ) parameter: v gs 0 10 20 30 40 50 60 70 80 a 100 i d 0 100 200 300 m 500 r ds(on) v gs [v]= a= 5 b= 6 c= 8 d= 10 e= 12 e b c d a 7 typ. transfer characteristics i d = f ( v gs ); v ds 2 x i d x r ds(on)max parameter: t p = 80 s 2 3 4 5 v 7 v gs 0 10 20 30 40 a 60 i d 8 typ. forward transconductance g fs = f( i d ); t j =25c parameter: g fs 0 5 10 15 20 25 a 35 i d 0 2 4 6 8 10 12 14 16 18 20 s 24 g fs
2002-01-31 page 6 preliminary data spi35n10 spp35n10,spb35n10 9 drain-source on-state resistance r ds(on) = f ( t j ) parameter : i d = 26.4 a, v gs = 10 v -60 -20 20 60 100 140 c 200 t j 0 20 40 60 80 100 120 140 160 m 190 spp35n10 r ds(on) typ 98% 10 typ. gate threshold voltage v gs(th) = f ( t j ) parameter: v gs = v ds -65 -35 -5 25 55 85 115 c 175 t j 1.5 2 2.5 3 v 4 v gs(th) i d =1ma i d =83a 11 typ. capacitances c = f ( v ds ) parameter: v gs =0v, f =1 mhz 0 5 10 15 20 25 v 35 v ds 1 10 2 10 3 10 4 10 pf c c iss c oss c rss 12 forward character. of reverse diode i f = f (v sd ) parameter: t j , t p = 80 s 0 0.4 0.8 1.2 1.6 2 2.4 v 3 v sd 0 10 1 10 2 10 3 10 a spp35n10 i f t j = 25 c typ t j = 25 c (98%) t j = 175 c typ t j = 175 c (98%)
2002-01-31 page 7 preliminary data spi35n10 spp35n10,spb35n10 11 typ. avalanche energy e as = f ( t j ) par.: i d = 35 a , v dd = 25 v, r gs = 25 25 45 65 85 105 125 145 c 185 t j 0 30 60 90 120 150 180 210 mj 270 e as 12 typ. gate charge v gs = f ( q gate ) parameter: i d = 35 a pulsed 0 10 20 30 40 50 60 nc 75 q gate 0 2 4 6 8 10 12 v 16 spp35n10 v gs 0,8 v ds max ds max v 0,2 13 drain-source breakdown voltage v (br)dss = f ( t j ) -60 -20 20 60 100 140 c 200 t j 90 92 94 96 98 100 102 104 106 108 110 112 114 v 120 spp35n10 v (br)dss
2002-01-31 page 8 preliminary data spi35n10 spp35n10,spb35n10 published by infineon technologies ag , bereichs kommunikation st.-martin-strasse 53, d-81541 mnchen ? infineon technologies ag 1999 all rights reserved. attention please! the information herein is given to describe certain components and shall not be considered as warranted characteristics. terms of delivery and rights to technical change reserved. we hereby disclaim any and all warranties, including but not limited to warranties of non-infringement, regarding circuits, descriptions and charts stated herein. infineon technologies is an approved cecc manufacturer. information for further information on technology, delivery terms and conditions and prices please contact your nearest infineon technologies office in germany or our infineon technologies reprensatives worldwide (see address list). warnings due to technical requirements components may contain dangerous substances. for information on the types in question please contact your nearest infineon technologies office. infineon technologies components may only be used in life-support devices or systems with the express written approval of infineon technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. if they fail, it is reasonable to assume that the health of the user or other persons may be endangered.
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